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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1280 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features * * * * * * 170-230 MHz 28 VOLTS IMD = -53 dBc POUT = 20 WATTS GP = 7.5 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1280 is a gold metallized epitaxial silicon NPN transistor designed for high linearity class AB operation. Internal impedance matching and an emitter ballasted die geometry make this devise ideally suited for VHF and Band lll television transmitter and transposers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 60 30 4.0 16 150 +200 -65 to +150 Unit V V V A W C C Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.2 C/W MSCXXXX.PDF 01-19-99 MS1280 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 Symbol BVCBO BVCER BVCEO BVEBO HFE IC = 100mA IC = 100mA IC = 100mA IE = 20mA VCE = 5V Test Conditions Min. IE = 0mA RBE = 10 IB = 0mA IC = 0mA IC = 1A 60 60 30 4.0 10 Value Typ. ----------- Max. --------120 Unit V V V V --- DYNAMIC Symbol POUT GP IMD COB f = 225 MHz f = 225 MHz f = 225 MHz f =1 MHz Test Conditions Min. VCE = 28W VCE = 28W VCE = 28W VCB = 30V IC = 3.5 mA IC = 3.5 mA IC = 3.5 mA 20 7.5 ----- Value Typ. -----53 --- Max. --8.0 --150 Unit W dB dB pf IMPEDANCE DATA FREQ 170 MHz 200 MHz 230 MHz POUT = 20W VCE = 28V ZIN() ) 0.6 + j0.7 0.55 + j0.8 0.5 + j0.9 ZCL() ) 5.9 + j3.5 5.0 + j3.0 4.2 + j2.8 MSCXXXX.PDF 01-19-99 MS1280 PACKAGE MECHANICAL DATA MSCXXXX.PDF 01-19-99 |
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